Design of a ternary memory cell using cntfets

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WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … WebApr 7, 2024 · However, the increased charge mobility also enhances the leakage power. This work uses CNTFET for designing a low-power eight-transistor static random access …

Design and Realization of Multiple Valued Logic Gates using …

WebWith the miniaturization of digital integrated circuits, electronic systems with increased functionality and enhanced performance are preferred. Multi-valued logic design is a promising alternative that offers a higher number of data/information which ... WebOct 26, 2024 · In ternary logic, the CNTFET-based memory cell is designed in . In this design, a buffer is applied for read operation while the transmission gate is utilised for … in and out reclassification

Design of a Ternary Memory Cell Using CNTFETs IEEE …

WebThis paper presents a design of a 3VL memory cell using carbon nano-tube field-effect transistors (CNTFETs). 3VL is a promising alternative to conventional binary logic, as it has better performance in terms of area, power and also reduces interconnect delay. This cell uses a control gate for the write and read operation to make them separate. WebIn this paper, the design of ternary logic gates (standard ternary inverter, ternary NAND, ternary NOR) based on carbon nanotube field effect transistor (CNTFET) and resistive random... WebSep 1, 2012 · This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to … dva office brisbane

Design of low-power and high-speed CNTFET-based TCAM cell for …

WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional binary logic because it allows simplicity and energy efficiency in modern digital design due to the reduced circuit overhead in interconnects and chip area. WebOct 26, 2024 · The ternary logic is observed to be a better alternative to the traditional binary logic because it offers faster computations, smaller chip area, and lesser interconnects. Thus, it allows designing the low-complex, high-speed, and energy-efficient circuits in future digital design. in and out recreationWebFeb 28, 2011 · In this paper, a novel design of a ternary memory cell based on CNTFETs is proposed; this cell uses a transmission gate for the write operation and a buffer for the read operation to make them separate. Chirality of the CNTFETs is utilized for threshold voltage control, thus avoiding the use of additional power supplies. dva occupational therapy providers

"WebFeb 27, 2015 · Activities and Societies: WORK ON DESIGN OF TERNARY MEMORY USING CNTFET PUBLISHED PAPER IN IEEE CONFERENCE ICECS-2015. MASTERS IN VLSI AND EMBEDDED SYSTEM DESIGN GOVT. ENGG. COLLEGE, RAJKOT " - Design of a ternary memory cell using cntfets

Design of a ternary memory cell using cntfets

An SEU-hardened ternary SRAM design based on efficient ternary C-ele…

WebApr 7, 2024 · However, the increased charge mobility also enhances the leakage power. This work uses CNTFET for designing a low-power eight-transistor static random access memory (8T SRAM) cell. The leakage power of the proposed cell is reduced by 2.21 × compared to conventional 6T SRAM at 0.3 V with similar CNTFET parameters. WebDesign of a ternary memory cell using CNTFETs. S Lin, YB Kim, F Lombardi. IEEE transactions on nanotechnology 11 (5), 1019-1025, 2012. 156: 2012: Design of a CNTFET-based SRAM cell by dual-chirality selection. S Lin, YB Kim, F Lombardi. IEEE Transactions on Nanotechnology 9 (1), 30-37, 2009. 114:

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WebAug 3, 2012 · In this paper, a novel design of a ternary memory cell based on CNTFETs is proposed; this cell uses a transmission gate for the write operation and a buffer for the read operation to make them separate. Chirality of the CNTFETs is utilized for threshold … WebA memory cell is designed for the construction of a ternary random-access-memory array (TRAM). A ternary decoder and encoder are presented to be the elements of a complete ternary read-only memory (TROM). A modified ternary inverter (MTI) is taken as a unit cell of the ternary memory matrix.

WebIn addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing to its multilevel cell capability that enables the storage of multiple resistance states within a single cell. In this manuscript, a design approach for ternary combinational logic circuits while using CNTFETs and RRAM is presented. WebJan 24, 2024 · In addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing to its multilevel cell capability that enables the storage of multiple resistance ...

WebCarbon nanotube-based transistors (CNTFETs) have been shown to exhibit ambipolar field-effect transistor behavior, allowing circuit designers to easily choose between n - and p-conduction channels by applying correct voltages at a polarity gate.In this paper, we explore this ambipolar behavior of the CNTFET to design both binary and ternary content … WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional …

WebThis paper presents a novel design of ternary Static Read Access Memory (SRAM) using Carbon Nano-tube Field Effect Transistors (CNTFETs). Advantages of CNTFET technology along with a brief discussion on Stanford university model of CNTFET used for simulation of SRAM are discussed.

WebApr 1, 2015 · In this Letter, we have presented a DCAM cell capable of ternary logic storage using four CNT transistors (CNTFETs). We have shown using SPICE … in and out receiptWebJan 27, 2024 · This paper presents the design of a CNFET-based ternary content-addressable memory (TCAM) cell and rigorously analyzes its performance in terms of power–delay product (PDP) and static noise margin (SNM). The effect of variations of the chiral vector on the performance of the TCAM cell is also comprehensively investigated. dva office belfastWebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … in and out ratingWebJan 1, 2024 · This paper proposes a novel SEU-hardened ternary SRAM (TSRAM) cell based on an efficient ternary C-element (TC-element). The proposed design uses one supply voltage and dual-threshold CNTFETs, while the previous CNTFET-based TSRAMs need three different threshold voltages or two supply voltages. dva office ballaratWebJun 1, 2016 · This paper has initially presented two ternary CNTFET SRAMs based on a previously suggested standard ternary inverter. Sizing has been performed by grouping … in and out qatarWebThis paper presents a novel design of ternary Static Read Access Memory (SRAM) using Carbon Nano-tube Field Effect Transistors (CNTFETs). Advantages of CNTFET … in and out reddit dva office central coast